| Preface |
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1 The Concept of Quantum-Dot Cellular Automata |
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1 | (16) |
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1.1 Needed: A New Device Paradigm for the Nanoscale |
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1 | (1) |
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1.2 The Physical Representation of Information |
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2 | (1) |
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3 | (1) |
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3 | (1) |
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4 | (1) |
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4 | (1) |
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4 | (1) |
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1.5 The Quantum-Dot Cellular Automata Paradigm |
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5 | (2) |
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7 | (1) |
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1.7 Clocked QCA Shift Devices |
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8 | (1) |
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8 | (1) |
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1.9 Robustness against Thermal Errors and Defects |
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9 | (4) |
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13 | (1) |
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14 | (3) |
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2 QCA Simulation with the Occupation-Number Hamiltonian |
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17 | (8) |
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M. Macucci and M. Governale |
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17 | (1) |
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2.2 Formulation of the Occupation-Number Hamiltonian |
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18 | (1) |
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2.3 Diagonalization of the Occupation-Number Hamiltonian |
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19 | (1) |
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2.4 Application to the Evaluation of the Effects of Geometric Asymmetry on the Cell-to-Cell Response Function |
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20 | (3) |
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23 | (2) |
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3 Realistic Time-Independent Models of a QCA Cell |
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25 | (40) |
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J. Martorell, D.W.L. Sprung, M. Girlanda, and M. Macucci |
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25 | (1) |
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3.2 Heterostructure with a Uniform Gate |
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26 | (1) |
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27 | (6) |
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3.4 Linear Gate Deposited on Etched Surface |
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33 | (3) |
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3.5 Modeling of a Complete QCA Cell |
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36 | (1) |
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3.6 The Configuration-Interaction Method |
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37 | (9) |
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3.6.1 Cell defined with a hole-array gate |
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41 | (3) |
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44 | (2) |
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3.7 Analysis of Cells with more than 2 Electrons |
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46 | (6) |
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3.7.1 Many-electron driver cell |
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47 | (2) |
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3.7.2 Semiclassical model |
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49 | (1) |
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3.7.3 Many-electron driver cell |
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50 | (2) |
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3.8 Analysis of Polarization Propagation along a Semiconductor-Based Quantum Cellular Automaton Chain |
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52 | (5) |
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3.8.1 Model of a three-cell chain |
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52 | (5) |
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57 | (5) |
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62 | (3) |
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4 Time-Independent Simulation of QCA Circuits |
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65 | (22) |
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L. Bonci, S. Frunraviglia. M. Gattabigio, C. Ungarelli, G. Iannaccone, and M. Macucci |
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65 | (2) |
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4.2 Semiclassical Alodel of QCA Circuits |
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67 | (6) |
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73 | (4) |
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77 | (7) |
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4.4.1 Numerical simulation of more complex circuits |
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80 | (4) |
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84 | (3) |
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5 Simulation of the Time-Dependent Behavior of QCA Circuits with the Occupation-Number Hamiltonian |
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87 | (22) |
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I. Yakimenko and K.-F. Berggren |
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87 | (1) |
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5.2 Modeling of Chains of Quantum Cells |
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87 | (2) |
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5.3 Time Evolution of Polarization for a Chain of QCA Cells without Dissipation |
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89 | (4) |
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5.4 Time Evolution of Polarization for a Chain of QCA Cells with Dissipation |
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93 | (4) |
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5.5 Imperfections: Variable Coupling Strength, Defects, Stray Charges |
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97 | (10) |
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5.5.1 Variations of the intercellular distances |
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99 | (5) |
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5.5.2 Defects in interdot barriers |
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104 | (2) |
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5.5.3 Effect of stray charges |
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106 | (1) |
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107 | (2) |
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6 Time-Dependent Analysis of QCA Circuits with the Monte Carlo Method |
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109 | (34) |
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L. Bonci, M. Gattobigio, G. Iannaccone, and M. Macucci |
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109 | (1) |
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110 | (6) |
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6.2.1 Transition rates for a semi-cell |
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113 | (3) |
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6.3 Analysis of the Parameter Space |
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116 | (8) |
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116 | (4) |
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6.3.2 Calculation of the energy imbalance |
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120 | (4) |
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6.4 Simulation of Clocked and Nonclocked Devices |
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124 | (15) |
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6.4.1 QCA circuit simulator |
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125 | (1) |
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6.4.2 Simulation strategy |
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126 | (2) |
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6.4.3 Binary wire simulations |
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128 | (9) |
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6.4.4 Operation of a logic gate |
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137 | (2) |
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139 | (1) |
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140 | (3) |
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7 Implementation of QCA Cells with SOI Technology |
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143 | (36) |
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F.E. Prins, C. Single, G. Wetekara, D.P. Kern, M. Macucci, L. Bonci, G. Iannaccone, and M. Gattobigio |
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7.1 Advantages of the SOI Material System |
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143 | (5) |
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7.2 Fabrication of Si-Nanostructures |
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148 | (1) |
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7.3 Experiments with the SOI Material System |
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148 | (6) |
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7.4 Electrical Characterization of Double Dots |
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154 | (3) |
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7.5 Electrical Characterization of a 4 Dot QCA Cell |
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157 | (6) |
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7.6 Concept of an Experiment for the Detection of QCA Operation |
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163 | (10) |
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173 | (2) |
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7.8 Possible Improvements |
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175 | (1) |
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176 | (3) |
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8 Implementation of QCA Cells in GaAs Technology |
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179 | (34) |
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Y. Jin, C.G. Smith, J. Martorell, D.W.L. Sprung, P.A. Machado, M. Girlanda, M. Governale, G. Iannaccone, and M. Macucci |
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180 | (1) |
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8.2 Nanofabrication of GaAs Devices |
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180 | (5) |
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8.3 Evaluation of the Achievable Precision |
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185 | (4) |
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8.4 Electrical Characterization of QPCs |
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189 | (1) |
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8.5 Modeling of Quantum Point Contacts: The Issue of Boundary Conditions |
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189 | (5) |
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8.6 Electron Decay from an Isolated Quantum Dot |
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194 | (17) |
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8.6.1 Lifetimes of the experimentally studied dot |
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194 | (2) |
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8.6.2 Statistical analysis of the experimental data |
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196 | (1) |
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197 | (1) |
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197 | (1) |
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8.6.5 Modeling of electron decay from the isolated quantum dot |
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198 | (2) |
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8.6.6 Theoretical framework |
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200 | (1) |
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201 | (1) |
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8.6.8 Dot with excess electrons |
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201 | (4) |
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8.6.9 Quasibound states of the dot |
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205 | (3) |
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8.6.10 Results and discussieu |
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208 | (3) |
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211 | (2) |
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9 Non-Invasive Charge Detectors |
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213 | (16) |
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G. Iannaccone, C. Ungarelli, M. Governale, M. Macucci, S. Gardelis, C.G. Smith, J. Cooper, D.A. Ritchie, and E.H. Linfield |
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213 | (1) |
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9.2 Experiments on a Double Dot System with Non-Invasive Detector |
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214 | (2) |
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9.3 Numerical Simulation of the Dot-Detector System |
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216 | (8) |
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9.4 Determining the Operation of a AlGaAs-GaAs QCA Cell |
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224 | (3) |
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227 | (1) |
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227 | (2) |
| 10 Metal Dot QCA |
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229 | (26) |
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G.L. Snider, A.O. Orlov, and R.K. Kummamuru |
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229 | (1) |
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229 | (2) |
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10.3 Clocked QCA Devices Fabricated Using Metal Tunnel Junctions |
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231 | (1) |
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10.4 Charging Process in QCA Half-Cell |
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231 | (8) |
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239 | (8) |
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10.6 Two Stage QCA Shift Register a Clocked QCA Cell |
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247 | (1) |
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10.7 Simulation of a Multi-Stage Shift Register |
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248 | (1) |
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249 | (4) |
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253 | (2) |
| 11 Molecular QCA |
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255 | (14) |
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255 | (1) |
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11.2 Aviram's Molecule: A Simple Model System |
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256 | (5) |
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11.3 A Functioning Two-Dot Molecular QCA Cell |
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261 | (3) |
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11.4 A Four-Dot Molecular QCA Cell |
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264 | (1) |
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264 | (2) |
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266 | (3) |
| 12 Magnetic Quantum-Dot Cellular Automata (MQCA) |
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269 | (8) |
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A. Imre, G. Csaba, G.H. Bernstein, and W. Porod |
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269 | (2) |
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12.2 Magnetic QCA Structures |
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271 | (2) |
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12.3 Modeling of Magnetic QCA Arrays |
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273 | (2) |
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275 | (1) |
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275 | (2) |
| 13 Final Remarks and Future Perspectives |
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277 | (4) |
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| Index |
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